Verlag des Forschungszentrums Jülich
JUEL-4001
The scope of this thesis is twofold. From the engineering point of view an existing MOCVD
tool, the AIXTRON Planetary Reactor® 2600G3 that has been developed for the growth of
III-V semiconductors, is optimized for the deposition of ceramic oxides. Both reactor and
deposition processes are modified to achieve an optimal temperature and process
homogeneity .Many changes on the vital components of the system like the liquid delivery
system (LDS-300B) from ATMI, the precursor and the gas transfer lines are performed.
Design of experiment methods (DOE) are applied early in many cases to narrow the process
window and reduce the multidimensional parameter space to a manageable minimum and
allow precise statements about the behavior ofthe reactor.
The scientific part of this thesis considers the systematic investigation of the properties of the
(Ba,Sr)TiO3 material system in form ofthin films ranging from few nm up to 120nm. Many
of the structural and especially the electrical properties interesting for application are focused
and a variety of analyzing techniques are applied. Within the scope of this work, an advanced
XRF analytic procedure is developed, in order to achieve a precision ≤1% in thickness and
stoichiometry measurements. The investigations cover all important material aspects of BST
and especially its integration in the existing CMOS process. Finally, a central point in the
discussion is the interrelation between the microstructure of the films and the obtained
electrical properties.
Fitsilis, Fotios
MOCVD of High-K Ceramic Thin Films for the Gbit DRAM Technology
IV, 136 S., 2003
The next generation of DRAM memories demands the miniaturization of the storage
capacitor. The road to smaller capacitors still able to maintain a sufficient amount of charge in
terms of an error free logic state recognition leads to high-k materials. (Ba,Sr)TiO3 is the most
promising of these new materials, since it offers a high relative permittivity combined with
low leakage. Deposition of BST via MOCVD is considered to be the method of choice for
thin films in view of DRAM application, in order to achieve homogenous growth and
sufficient step coverage in high aspect ratio trenches. This thesis is concerned with the
MOCVD growth of BST thin films using a prototype tool for oxide deposition and the
systematical understanding of the film properties as a function of their composition and of the
growth parameters.
Neuerscheinungen
Schriften des Forschungszentrums Jülich
Ihre Ansprechperson
Heike Lexis
+49 2461 61-5367
zb-publikation@fz-juelich.de