Verlag des Forschungszentrums Jülich
JUEL-3850
Ebert, Philipp
Point Defects in Compound Semiconductor Surfaces
IV, 235 S., 2001
The present work reviews atomic-scale properties of point defects and dopant atoms exposed
in and below cleavage surfaces of III-V and II-VI semiconductors. In particular, we concentrate on
the identification of the types of defects and dopant atoms, the determination of charge-transition
levels, localized defect states, the electrical charge, and lattice relaxation, as well as the
measurement of the interactions between different defects and/or dopant atoms. The physical
mechanisms goveming the formation of defect complexes, the compensation of dopant atoms, the
pinning of the Fermi level, and the stability of defects are discussed in the light of the available
theoretical information and experimental results obtained mostly by scanning tunneling microscopy.
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